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Platinized Silicon Wafers

Thin titanium dioxide/platinum films for bottom electrodes deposited on four-inch silicon wafers. The platinum films can withstand up to 650C in oxygen for one hour with no roughening or hillock formation.  Radiant will coat the electrode with 20/80 PZT or 4/20/80 PNZT if requested.

Platinized Silicon Wafer Detailed Specifications


PZT and PNZT Wafers


Several compositions to choose from of sol-gel PZT ranging from 600 to 1.8 in thickness:

20/80 PZT from 600 to 3000
4% niobium doped 20/80 PZT from 600 to 1.8
9/65/35 PLZT up to 2500
15/0/100 PLT up to 1200
52/48 PZT from 3000 to 1 (A 300 PLT seed layer will be under the PZT)
The PZT composition may be placed on the wafer with or without a bottom electrode of platinum.  If there is no bottom electrode, the thin stack of titanium dixoide and 10/0/100 PLT will be placed below the PZT layer as a barrier.  Platinum top and bottom electrodes, either global or patterned can be formed with the film.  Chrome/Gold metal interconnect lines may be placed in contact with the electrodes. 


Radiant Technologies has a complete integrated ferroelectric capacitor process running on 5-micron design rules.  Capacitors as small as 5 on a side up to 1 centimeter on a side consisting of 2600 20/80 PZT or 1 4% niobium-doped 20/80 PZT.  The capacitors are passivated with Radiant's patented interlayer dielectric stack allowing them to be packaged in TO type transistor packages.  A set of design rules and a pre-formatted wafer file in GDS-II format are available upon request.  At some time in the near future Radiant will expand the foundry process to allow the fabrication of piezoelectric cantilevers, membranes, and platforms.  Please contact us with any requests. 
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